SI1411DH

Si1411DH www.DataSheet4U.com New Product Vishay Siliconix P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −150 FEATURES ID (A) −0.52 −0.51 rDS(on) (W) 2.6 @ VGS = −10 V 2.7 @ VGS = −6 V Qg (Typ) 4 2 nC 4.2 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance APPLICATIONS D Active Clamp Circuits in DC/DC Power Supplies Product Is Completely Pb-free SOT-363 SC-70 (6-LEADS) D 1 6 5 D Marking Code YY D 2 D BG XX G S G 3 4 S Lot Traceability and Date Code Part # Code D P-Channel MOSFET Top View Ordering Information: Si1411DH-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Single Pulse Avalanche Current Single Pluse Avalanch Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 5 secs Steady State −150 "20 Unit V −0.52 −0.38 −0.8 −1.3 −2.1 0.22 1.56 0.81 −55 to 150 −0.42 −0.3 A −0.83 mJ 1.0 0.52 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73242 S-50461—Rev. B, 14-Mar-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 60 100 34 Maximum 80 12...