SI1426DH

Si1426DH www.DataSheet4U.com New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 0.115 @ VGS = 4.5 V 2.9 rDS(on) (W) 0.075 @ VGS = 10 V ID (A) 3.6 D TrenchFETr Power MOSFET D Thermally Enhanced SC-70 Package D PWM Optimized APPLICATIONS D Boost Converter in Portable Devices – Low Gate Charge (3 nC) D Low Current Synchronous Rectifier SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code D 2 5 D AC G 3 4 S XX YY Lot Traceability and Date Code Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID 2.6 IDM IS 1.3 1.6 0.8 –55 to 150 10 0.8 1.0 0.5 W _C 2.1 A Symbol VDS VGS 5 secs 30 Steady State Unit V "20 3.6 2.8 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71805 S-05803—Rev. A, 18-Feb-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W 1 Si1426DH www.DataSheet4U.com Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current O...