SI1450DH

Si1450DH www.DataSheet4U.com New Product Vishay Siliconix N-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.047 at VGS = 4.5 V 8 0.051 at VGS = 2.5 V 0.058 at VGS = 1.8 V 0.069 at VGS = 1.5 V ID (A)a 4.0a 4.0a 4.0 4.0 a a FEATURES Qg (Typ) TrenchFET® Power MOSFET: 1.5 V Rated 100 % Rg Tested RoHS 4.24 nC APPLICATIONS COMPLIANT Load Switch for Portable Applications - Guaranteed Operation at VGS = 1.5 V Critical for Optimized Design and Space Savings SOT-363 SC-70 (6-LEADS) D D 1 6 D Marking Code AH XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free) S N-Channel MOSFET D 2 5 D G G 3 4 S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 8 ±5 6.04a 4.8a 4.53a 3.62a 15 2.3 1.3c 2.78 1.78 1.56b, c 1.0b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter t ≤ 5 sec Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum ...