2SC6037J

Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.60+−00..0053 1.00±0.05 Unit: mm 0.12+−00..0031 0.80±0.05  Features 3  Low collector-emitter saturation voltage VCE(sat) (0.375) 0.85−+00..0035 1.60±0.05 5°  SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.80)  Absolute Maximum Ratings Ta = 25°C (0.50)(0.50) / Parameter Symbol Rating Unit Collector-base voltage (Emitter open) e e) Collector-emitter voltage (Base open) c . typ Emitter-base voltage (Collector open) n d stage tinued Collector current le on Peak collector current a elifecyc disc Collector power dissipation n u ct ped, Junction temperature rodu d ty Storage temperature VCBO 15 V VCEO 12 V VEBO 5 V IC 500 mA ICP 1 A PC 125 mW Tj 125 °C Tstg –55 to +125 °C 0 to 0.02 0.70−+00..0035 0.10 max. 5° 1: Base 2: Emitter 3: Collecter Marking Symbol : 4U SSMini3-F1 Package te tinwing foudrisPcontinue  Electrical Characteristics Ta = 25°C±3°C in n follo ned Parameter Symbol Conditions Min Typ Max Unit des , pla Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V a o inclu type Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 12 V c ued nce Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V M is ntin tena Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA isco ai...