STG8203

www.DataSheet4U.com S T G 8203 J un.06 2005 ver1.2 S amHop Microelectronics C orp. Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m £[ ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON ). 27 @ V G S = 4.0V 42 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. ( 1 ) D1 D2( 8 ) T S S OP 1 2 3 4 8 7 6 5 (T OP V IE W) ( 4 ) G1 ( 2,3 ) S 1 G2 ( 5 ) S 2 ( 6,7 ) ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 5 25 2 1.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 85 C /W 1 www.DataSheet4U.com S T G 8203 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.0V, ID = 4A V GS =2.5V, ID = 3A V DS = 5V, ID =4A Min Typ C Max Unit 20 1 V uA 100 nA 0.5 24 35 13 800 155 125 1.5 27 42 V m ohm m ohm ON CHAR ACTE R IS TIC...