Dual N-Channel Enhancement Mode Field Effect Transistor
Description
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S T G 8210
S amHop Microelectronics C orp. J un,08 2005 ver1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
7A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
20 @ V G S = 4.0V 28 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage. E S ...
