C4417

Transistors www.DataSheet4U.com 2SC4417 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image (0.425) 0.3+0.1 –0.0 Unit: mm 0.15+0.10 –0.05 ■ Features High transition frequency fT Satisfactory linearity of forward current transfer ratio hFE S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 3 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 0.9±0.1 0.9+0.2 –0.1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 45 35 4 50 150 150 −55 to +150 Unit V V V mA mW °C °C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 2Z ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency * Symbol VCBO VCEO VEBO ICEO hFE VCE(sat) fT Cre Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 20 V, IB = 0 VCE = 10 V, IC = 10 mA IC = 20 mA, IB = 2 mA VCB = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = −1 mA, f = 10.7 MHz Min ...