SSM3J109TU

SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V) Ron = 172 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID Pulse IDP -2 A -4 Drain power dissipation PD (Note 1) 800 mW PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2) Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±...