SSM3J110TU

SSM3J110TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications 1.8V drive Low on-resistance: Ron = 240mΩ (max) (@VGS = −1.8 V) Ron = 145mΩ (max) (@VGS = −2.5 V) Ron = 94mΩ (max) (@VGS = −4.0 V) 0.65±0.05 2.0±0.1 1 2 3 0.166±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −12 ±8 −2.3 −4.6 800 500 150 −55~150 Unit V V mW °C °C 0.7±0.05 A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm2 ) Note: 1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.6...