SSM3J113TU

SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V drive Low on-resistance: Ron = 449mΩ (max) (@VGS = −2.0 V) Ron = 249mΩ (max) (@VGS = −2.5 V) Ron = 169mΩ (max) (@VGS = −4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS −20 V VGSS ± 12 V ID −1.7 A IDP −3.4 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 1: Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSH...