SSM3J115TU

SSM3J115TU www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications 1.5 V drive Low ON-resistance: Ron = 353 mΩ (max) (@VGS = −1.5 V) Ron = 193 mΩ (max) (@VGS = −1.8 V) Ron = 125 mΩ (max) (@VGS = −2.5 V) Ron = 98 mΩ (max) (@VGS = −4.0 V) 2.0±0.1 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.3 -0.05 3 0.166±0.05 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −20 ±8 −2.2 −4.4 800 500 150 −55~150 Unit V V 1 2 mW °C °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Note: 1...