SSM3J120TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J120TU
○ Power Management Switch Applicatio...
SSM3J120TU
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
SSM3J120TU
○ Power Management Switch Applications
○ High-Current Switching Applications
1.5 V drive Low on-resistance
Ron = 140 mΩ (max) (@VGS = -1.5 V) Ron = 78 mΩ (max) (@VGS = -1.8 V) Ron = 49 mΩ (max) (@VGS = -2.5 V) Ron = 38 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
2.0±0.1 0.65±0.05
Unit: mm
2.1±0.1 1.7±0.1
0.3-+00..015
1
2
3
0.166±0.05
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-4.0 A
-8.0
Drain power dissipation
PD (Note 1)
800
mW
PD (Note 2)
500
Channel temperature Storage temperature
Tch
150
°C
Tstg
−55~150
°C
0.7±0.05
UFM
1. Gate 2. Source 3. Drain
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
JEITA TOSHIBA
―
2-2U1A
absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Weight: 6.6mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1 : Mounted on ceramic board (25.4 mm × 25.4 ...