SSM3J15FS

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications SSM3J15FS Small package Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg −30 V ±20 V −100 mA −200 100 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2H1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.0024 g(typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 3 Equivalent Circuit (top view) 3 DQ 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators sh...