SSM3J305T

SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −30 ± 20 −1.7 −3.4 700 150 −55 to 150 Unit V V A mW °C °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: JEDEC JEITA TOSHIBA ― ― 2-3S1A Weight: 10 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance...