2SC6112

Ordering number : ENA1154 www.DataSheet4U.com 2SC6112 SANYO Semiconductors DATA SHEET 2SC6112 Features NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage and high reliability. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300μs, duty cycle≤10% Tc=25°C Conditions Ratings 1000 500 7 15 25 1.75 55 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=500V, IE=0A VEB=5V, IC=0A VCE=5V, IC=1.2A VCE=5V, IC=6A VCE=10V, IC=1.2A VCB=10V, f=1MHz 40 8 18 80 MHz pF Ratings min typ max 10 10 80 Unit μA μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sust...