2SC6146

Ordering number : ENA1160 www.DataSheet4U.com 2SC6146 SANYO Semiconductors DATA SHEET 2SC6146 Features NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg PW≤300μs, duty cycle≤10% Conditions Ratings 800 800 350 8 1 2 0.5 1 150 --55 to +150 Unit V V V V A A A W °C °C Base Current Collector Dissipation Junction Temperature Storage Temperature Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 Conditions VCB=400V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=5V, IC=1mA 100 10 20 Ratings min typ max 10 10 200 Unit μA μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear cont...