2STF1525

www.DataSheet4U.com 2STF1525 Low voltage high performance NPN power transistor Preliminary data Features ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1 Applications ■ ■ ■ ■ ■ ■ Emergency lighting LED Motherboard and hard disk drive Mobile equipment Battery charger Voltage regulation Figure 1. SOT-89 Internal schematic diagram Description The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Marking 1525 Package SOT-89 Packaging Tape and reel Order codes 2STF1525 June 2009 Doc ID 15794 Rev 1 1/7 www.st.com 7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings www.DataSheet4U.com 2STF1525 1 Electrical ratings Table 2. Symbol VCEX VCEO VEBO IC ICM IB PTOT Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE = -1.5 V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature Value 95 25 5 5 10 1 1.4 -65 to 150 150 Unit V V V A A A W °C °C Table 3. Symbol RthJA(1) Thermal data Parameter Thermal resistance junction-ambient ...