BUK9MGP-55PTS
www.DataSheet4U.com
Dual TrenchPLUS logic level FET
Rev. 01 — 14 May 2009 Product data sheet
1. Product ...
BUK9MGP-55PTS
www.DataSheet4U.com
Dual TrenchPLUS logic level FET
Rev. 01 — 14 May 2009 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power
transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing
transistors and over temperature protection diodes.
1.2 Features and benefits
Integrated current sensors Integrated temperature sensors
1.3 Applications
Lamp switching Motor drive systems Power distribution Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference Conditions VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 23; see Figure 25 Tj = 25 °C; VGS = 5 V; see Figure 27 VGS = 0 V; ID = 250 µA; Tj = 25 °C VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 24; see Figure 26 Tj = 25 °C; VGS = 5 V; see Figure 28 VGS = 0 V; ID = 250 µA; Tj = 25 °C Min Typ 8.6 Max 10 Unit mΩ Symbol Parameter Static characteristics, FET1 RDSon drain-source on-state resistance ratio of drain current to sense current
ID/Isense
8100 55
9000 -
9900 -
A/A V
V(BR)DSS drain-source breakdown voltage Static characteristics, FET2 RDSon drain-source on-state resistance ratio of drain current to sense current
-
21.3
25
mΩ
ID/Isense
5910 55
6570 -
7227 -
A/A V
V(BR)DSS drain-source breakdown voltage
NXP Semiconductors
www.DataSheet4U.com
BUK9MGP-55PTS
Dual TrenchPLUS logic level FET
2. Pinning information
Table ...