Dual MOSFET
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ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MO...
Description
www.DataSheet4U.com
A Product Line of Diodes Incorporated
ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
Summary
Device V(BR)DSS (V) QG (nC) RDS(on) (Ω) 0.230 @ VGS= 10V Q1 100 9.2 0.300 @ VGS= 4.5V 0.235 @ VGS= -10V Q2 -100 16.5 0.320 @ VGS= -4.5V -1.9 1.9 -2.2 ID (A) TA= 25°C 2.1
Description
This new generation complementary dual MOSFET features low on-resistance achievable with low gate drive.
D1
D2
Features
100 V Complementary in SOIC package Low on-resistance Fast switching speed Low voltage (VGS = 4.5 V) gate drive
G1 S1
Q1 N-Channel
G2 S2
Q2 P-Channel
Applications
DC motor control Backlighting Class D Audio Output Stages (<100W)
G1 D1 D2 D2 Top view S2 S1 D1
Ordering information
Device ZXMC10A816N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
G2
Device marking
ZXMC 10A816
Issue 1.3 - March 2009
© Diodes Incorporated 2009
1
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ZXMC10A816N8
Absolute maximum ratings
Parameter Symbol Nchannel Q1
100
Pchannel Q2
-100
Unit
Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current @ VGS= 10V; TA=25°C
(c)(d) (b)(d) (b)(d) (b)(d) (a)(d) (a)(e) (f)(d)
VDSS VGS ID
V V A
±20
2.1 1.7 1.7 2.0 2.3
±20
-2.2 -1.8 -1.7 -2.0 -2.4 -10.5 -3.1 -10.5 1.3 10.0 1.8 14.2 2.1 16.7
IDM IS ISM PD PD PD PD Tj, Tstg
9.4 3.0 9.4
A A A W mW/°C W mW/°C W mW/°C
C...
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