ZXMHC3A01N8

A Product Line of Diodes Incorporated www.DataSheet4U.com ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 125mΩ @ VGS= 10V N-CH 30V 3.9nC 180mΩ @ VGS= 4.5V 210mΩ @ VGS= -10V P-CH -30V 5.2nC 330mΩ @ VGS= -4.5V -1.6A 2.2A -2.1A ID TA= 25°C 2.7A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D Applications DC Motor control DC-AC Inverters N1G N2G N1S/N2S Ordering information Device ZXMHC3A01N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 3A01 Issue 1.0 - March 2009 © Diodes Incorporated 1 www.diodes.com www.DataSheet4U.com ZXMHC3A01N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current @ VGS= 10V; TA=25°C (c) (b) (b) (b) (a) (f) Symbol VDSS VGS ID Nchannel 30 ±20 2.72 2.18 2.17 2.21 Pchannel -30 ±20 -2.06 -1.65 -1.64 -1.67 -8.84 -1.60 -8.84 Unit V V A IDM IS ISM PD PD PD Tj, Tstg 11.7 1.60 11.7 0.87 6.94 1.36 10.9 0.90 7.19 A A A W mW/°C W mW/°C W mW/°C °C Continuous Source current (Body diode) at TA =25°C Pulsed Source current (Body diode) at TA =25°C Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating f...