ZXMHC10A07N8

www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 0.70Ω @ VGS= 10V N-CH 100V 2.9nC 0.90Ω @ VGS= 6.0V 1.00Ω @ VGS= -10V P-CH -100V 3.5nC 1.45Ω @ VGS= -6.0V -0.7A 0.9A -0.9A ID TA= 25°C 1.0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D Applications DC Motor control DC-AC Inverters N1G N2G N1S/N2S Ordering information Device ZXMHC10A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 10A07 Issue 1.0 - March 2009 © Diodes Incorporated 1 www.diodes.com www.DataSheet4U.com ZXMHC10A07N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current @ VGS= 10V; TA=25°C (c) (b) (b) (b) (a) (f) Symbol VDSS VGS ID Nchannel 100 ±20 1.00 0.80 0.80 0.81 Pchannel -100 ±20 -0.85 -0.68 -0.68 -0.69 -3.64 -0.60 -3.64 Unit V V A IDM IS ISM PD PD PD Tj, Tstg 4.30 0.70 4.30 0.87 6.94 1.36 10.9 0.90 7.19 A A A W mW/°C W mW/°C W mW/°C °C Continuous Source current (Body diode) at TA =25°C Pulsed Source current (Body diode) at TA =25°C Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear ...