Document
New Product
Si7145DP
www.DataSheet4U.com
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
ID (A) - 60d - 60d Qg (Typ.) 129 nC
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) (Ω) 0.0026 at VGS = - 10 V 0.00375 at VGS = - 4.5 V
PowerPAK SO-8
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
S
5.15 mm
• Adaptor Switch - Notebook Computers
G
Bottom View
D P-Channel MOSFET
Ordering Information: Si7145DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 30 ± 20 - 60d - 36.5a, b - 29.2a, b - 100 - 60d - 5.6a, b - 50 125 104 66.6 6.25a, b 4.0a, b - 55 to 150 260 60d Unit V
Continuous Drain Current (TJ = 150 °C)
ID
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy
IDM IS IAS EAS
A
mJ
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Case t ≤ 10 s Steady State Symbol RthJA RthJC Typical 15 0.9 Maximum 20 1.2 Unit °C/W
Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 54 °C/W. d. Package limited. e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 64814 S09-0872-Rev. A, 18-May-09 www.vishay.com 1
New Product
Si7145DP
www.DataSheet4U.com
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall T.
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