STAP85025

www.DataSheet4U.com STAP85025 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive Description STAP1 The STAP85025 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. STAP85025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP ST advanced PowerSO-10RF package. STAP85025’s superior linearity performance makes it an ideal solution for car mobile radio. The STAP ST plastic package was designed to offer high reliability and high power capability. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) AM02217 Figure 1. Pin connection Drain Gate Source Table 1. Device summary Order code STAP85025 Package STAP1 Packaging Tube June 2009 Doc ID 15795 Rev 1 1/12 www.st.com 12 www.DataSheet4U.com Contents STAP85025 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum rati...