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2SC6145 Dataheets PDF



Part Number 2SC6145
Manufacturers Allegro Micro Systems
Logo Allegro Micro Systems
Description Audio Amplification Transistor
Datasheet 2SC6145 Datasheet2SC6145 Datasheet (PDF)

2SC6145 www.DataSheet4U.com Audio Amplification Transistor Features and Benefits ▪ ▪ ▪ ▪ ▪ LAPT (High frequency multi emitter transistor) Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 260 V versions available ▪ Complementary to 2SA2223 ▪ Recommended output driver: 2SC4382A Description Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique S.

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2SC6145 www.DataSheet4U.com Audio Amplification Transistor Features and Benefits ▪ ▪ ▪ ▪ ▪ LAPT (High frequency multi emitter transistor) Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 260 V versions available ▪ Complementary to 2SA2223 ▪ Recommended output driver: 2SC4382A Description Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These NPN power transistors achieve faster power-up by decreasing thermal resistance, and provide a higher avalanche breakdown voltage rating. The high powerhandling capacity of the TO-3P package allows a smaller footprint on the circuit board layout. This series of transistors is very well suited not only for multichannel applications for AV (audio-visual) amplifiers and receivers, but also for parallel connection applications for PA (professional audio system) amplifiers. Applications include the following: ▪ ▪ ▪ ▪ ▪ ▪ Single transistors for audio amplifiers Home audio amplifiers Professional audio amplifiers Automobile audio amplifiers Audio market Single transistors for general purpose Package: 3-Lead TO-3P Not to scale Equivalent Circuit E 3 B 1 C 2 38106 www.DataSheet4U.com 2SC6145 Audio Amplification Transistor Selection Guide Part Number Type hFE Rating Range R: 40 to 80 2SC6145* NPN Range O: 50 to 100 Range Y: 70 to 140 *Specify hFE range when ordering. 30 pieces per tube Packing Absolute Maximum Ratings at TA = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC TJ Tstg TCASE = 25°C Remarks Rating 230 230 5 15 4 160 150 –55 to150 Unit V V V A A W °C °C ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Collector-Cutoff Current Emitter Cutoff Current Collector-Emitter Voltage DC Current Transfer Ratio* Collector-Emitter Saturation Voltage Cutoff Frequency Output Capacitance Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB = 230 V VEB = 5 V IC = 25 mA VCE = 4 V, IC = 5 A IC = 5 A, IB = 0.5 A VCE = 12 V, IE = –2 A VCB = 10 V, IE = 0 A, f = 1 MHz Test Conditions Min. – – 230 40 – – – Typ. – – – – – 60 250 Max. 10 10 – 140 0.5 – – Unit μA μA V – V MHz pF *hFE rating: 40 to 80 (R brand on package), 50 to 100 (O), 70 to 140 (Y). Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 2 www.DataSheet4U.com 2SC6145 Audio Amplification Transistor Performance Characteristics 15 3A 1A 500 m A 3 300 m 10 IC (A) A 2 200 mA IC vs. VCE 100 mA VCE(sat) vs. IB 5 VCE(sat) (V) 50 mA IB= 20 mA 1 I C= 5 A 0 0 1 2 VCE (V) 15 3 4 0 0 0.5 IC= 10 A IB (A) 1.0 1.5 2.0 1000 125°C IC (A) IC vs. VBE VCE = 4 V Continuous hFE vs. IC hFE 10 100 25°C –30°C VCE = 4 V Continuous 5 10 12 5°C 25°C –30 °C 0 0 0.5 VBE (V) 1.0 1.5 2.0 1 0.01 0.1 1 IC (A) 10 100 80 70 60 100.0 Typ. 10.0 IC (A) DC 10 10 0 m s m fT (MHz) s 50 40 30 20 10 0 0.01 0.1 1 10 100 VCE = 12 V Continuous fT vs. IE Safe Operating Area 1.0 TA= 25°C, single pulse, no heatsink, natural cooling 0.1 0.01 1 10 –IE (A) 10.00 200 VCE (V) 100 1000 150 RθJA (°C/W) 1.00 PC (W) W ith In RθJA vs. t PC vs. TA 0.10 100 fin ite He at si nk 50 3.5 0.01 0 Without Heatsink 0 25 50 75 100 TA (°C) 125 150 1 10 t (ms) 100 1000 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 3 www.DataSheet4U.com 2SC6145 Audio Amplification Transistor Package Outline Drawing, TO-3P 15.8 ±0.2 15.6 ±0.3 2.0 ±0.2 5.0 ±0.2 1.8 ±0.3 6.0 ±0.2 14.0 ±0.3 13.6 ±0.2 9.6 ±0.2 5.0 MAX 2.1 MAX Exposed heatsink pad XXXXXXXX XXXXX XXXXX 19.9 ±0.3 Ø3.2 ±0.1 1.7 –0.1 +0.2 +0.2 Branding Area 2 –0.1 3 +0.2 3.5 2 –0.1 +0.2 0.6 –0.1 20.0 MIN View B +0.2 –0.1 +0.2 –0.1 1.0 View A 5.45 ±0.1 Terminal dimension at lead tip 1 2 3 0.7 MAX 0.7 MAX View A View B Gate burr: 0.3 mm (max.), mold flash may appear at opposite side Terminal core material: Cu Terminal treatment: Ni plating and Pb-free solder dip Leadform: 100 Package: TO-3P (M100) Approximate weight: 6 g Dimensions in millimeters Branding codes (exact appearance at manufacturer discretion): 1st line, type: C6145 2nd line left, lot: YM Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) 2nd line right, subtype: H Where: H is the hFE rating (O, R, or Y; for values see footnote, Electrical Characteristics table) Leadframe plating Pb-free. Device composition includes high-temperature solder (Pb >85%), which is exempted from the RoHS directive. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicr.


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