Document
2SC6145
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Audio Amplification Transistor
Features and Benefits
▪ ▪ ▪ ▪ ▪ LAPT (High frequency multi emitter transistor) Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 260 V versions available ▪ Complementary to 2SA2223 ▪ Recommended output driver: 2SC4382A
Description
Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These NPN power transistors achieve faster power-up by decreasing thermal resistance, and provide a higher avalanche breakdown voltage rating. The high powerhandling capacity of the TO-3P package allows a smaller footprint on the circuit board layout. This series of transistors is very well suited not only for multichannel applications for AV (audio-visual) amplifiers and receivers, but also for parallel connection applications for PA (professional audio system) amplifiers. Applications include the following: ▪ ▪ ▪ ▪ ▪ ▪ Single transistors for audio amplifiers Home audio amplifiers Professional audio amplifiers Automobile audio amplifiers Audio market Single transistors for general purpose
Package: 3-Lead TO-3P
Not to scale
Equivalent Circuit
E 3
B
1
C
2
38106
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2SC6145
Audio Amplification Transistor
Selection Guide Part Number Type hFE Rating Range R: 40 to 80 2SC6145* NPN Range O: 50 to 100 Range Y: 70 to 140 *Specify hFE range when ordering. 30 pieces per tube Packing
Absolute Maximum Ratings at TA = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC TJ Tstg TCASE = 25°C Remarks Rating 230 230 5 15 4 160 150 –55 to150 Unit V V V A A W °C °C
ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Collector-Cutoff Current Emitter Cutoff Current Collector-Emitter Voltage DC Current Transfer Ratio* Collector-Emitter Saturation Voltage Cutoff Frequency Output Capacitance Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB = 230 V VEB = 5 V IC = 25 mA VCE = 4 V, IC = 5 A IC = 5 A, IB = 0.5 A VCE = 12 V, IE = –2 A VCB = 10 V, IE = 0 A, f = 1 MHz Test Conditions Min. – – 230 40 – – – Typ. – – – – – 60 250 Max. 10 10 – 140 0.5 – – Unit μA μA V – V MHz pF
*hFE rating: 40 to 80 (R brand on package), 50 to 100 (O), 70 to 140 (Y).
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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2SC6145
Audio Amplification Transistor
Performance Characteristics
15
3A 1A
500 m
A
3
300 m
10 IC (A)
A
2
200 mA
IC vs. VCE
100 mA
VCE(sat) vs. IB
5
VCE(sat) (V)
50 mA IB= 20 mA
1
I C= 5 A
0 0 1 2 VCE (V) 15 3 4 0 0 0.5
IC= 10 A
IB (A)
1.0
1.5
2.0
1000
125°C
IC (A)
IC vs. VBE
VCE = 4 V Continuous
hFE vs. IC
hFE
10
100
25°C
–30°C
VCE = 4 V Continuous
5
10
12 5°C 25°C
–30 °C
0
0
0.5
VBE (V)
1.0
1.5
2.0
1 0.01
0.1
1
IC (A)
10
100
80 70 60
100.0
Typ.
10.0 IC (A)
DC
10
10 0
m
s
m
fT (MHz)
s
50 40 30 20 10 0 0.01 0.1 1 10 100
VCE = 12 V Continuous
fT vs. IE
Safe Operating Area
1.0
TA= 25°C, single pulse, no heatsink, natural cooling 0.1
0.01
1
10
–IE (A)
10.00
200
VCE (V)
100
1000
150
RθJA (°C/W)
1.00
PC (W)
W ith
In
RθJA vs. t
PC vs. TA
0.10
100
fin
ite
He at si
nk
50
3.5
0.01
0
Without Heatsink 0 25 50 75 100 TA (°C) 125 150
1
10
t (ms)
100
1000
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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2SC6145
Audio Amplification Transistor
Package Outline Drawing, TO-3P
15.8 ±0.2 15.6 ±0.3 2.0 ±0.2 5.0 ±0.2 1.8 ±0.3 6.0 ±0.2 14.0 ±0.3 13.6 ±0.2 9.6 ±0.2 5.0 MAX 2.1 MAX
Exposed heatsink pad
XXXXXXXX XXXXX XXXXX
19.9 ±0.3
Ø3.2 ±0.1 1.7 –0.1
+0.2 +0.2
Branding Area
2 –0.1 3
+0.2
3.5
2 –0.1
+0.2
0.6 –0.1 20.0 MIN
View B
+0.2 –0.1 +0.2 –0.1
1.0
View A
5.45 ±0.1 Terminal dimension at lead tip
1
2
3
0.7 MAX 0.7 MAX
View A
View B
Gate burr: 0.3 mm (max.), mold flash may appear at opposite side Terminal core material: Cu Terminal treatment: Ni plating and Pb-free solder dip Leadform: 100 Package: TO-3P (M100) Approximate weight: 6 g Dimensions in millimeters
Branding codes (exact appearance at manufacturer discretion): 1st line, type: C6145 2nd line left, lot: YM Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) 2nd line right, subtype: H Where: H is the hFE rating (O, R, or Y; for values see footnote, Electrical Characteristics table)
Leadframe plating Pb-free. Device composition includes high-temperature solder (Pb >85%), which is exempted from the RoHS directive.
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicr.