Document
STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
Features
Order codes
VDSS (@Tjmax)
RDS(on) max.
ID
PW
STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
650 V
110 W 30 W < 0.285 Ω 13 A 110 W
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
3 2 1
TO-247
3 2 1
TO-220
123
I²PAK
3 1
D²PAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagram
$
' 3
Table 1. Device summary Order codes STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
Marking 18NM60N 18NM60N 18NM60N 18NM60N 18NM60N
Package D²PAK
TO-220FP I²PAK TO-220 TO-247
!-V
Packaging Tape and reel
Tube Tube Tube Tube
October 2010
Doc ID 15868 Rev 3
1/18
www.st.com
18
Contents
Contents
STB/F/I/P/W18NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 Doc ID 15868 Rev 3
STB/F/I/P/W18NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS VGS ID ID IDM (2) PTOT
IAR
EAS dv/dt(3)
Drain-source voltage (VGS =0) Gate- source voltage
Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed)
Total dissipation at TC = 25 °C Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t=1 s;TC=25 °C)
TJ Operating junction temperature Tstg Storage temperature
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 13 A, di/dt ≤400 A/µs, peak VDS ≤V(BR)DSS
Value
D²PAK,I²PAK TO-220FP
TO-220,TO-247
600 ± 25 13 8.2 52 110
13 (1) 8.2 (1) 52 (1)
30
Unit
V
A A A W
4.5 A
350 mJ 15 V/ns
2500
V
-55 to 150
°C
Table 3. Symbol
Thermal data Parame.