RSS070N05

www.DataSheet4U.com RSS070N05 Transistor Switching (45V, 7.0A) RSS070N05 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 (8) 5.0±0.2 (5) 6.0±0.3 3.9±0.15 1.5±0.1 0.15 zStructure Silicon N-channel MOS FET 1.27 0.4±0.1 0.1 Each lead has same dimensions zPackaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits 45 20 ±7.0 ±28 1.6 28 2 150 -55 to +150 Unit V V A A A A W o C o C *1 zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 *1 *2 (1) (2) (3) Max.1.75 zApplications Power switching , DC / DC converter , Inverter ∗1 (4) 0.5±0.1 (1) (4) 0.2±0.1 (1) (2) (3) (4) Total power dissipation Chanel temperature Range of Storage temperature *1 PW ≦10µｓ, Duty cycle≦1% *2 Mounted on a ceramic board ∗1 ESD Protection Diode. ∗2 Body Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. zThermal resistance (Ta=25°C) Parameter Chanel to ambient *2 Mounted on a ceramic board Symbol Rth(ch-a) Limits 62.5 Unit o C/W...