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RSS075P03 Dataheets PDF



Part Number RSS075P03
Manufacturers Rohm
Logo Rohm
Description Switching
Datasheet RSS075P03 DatasheetRSS075P03 Datasheet (PDF)

www.DataSheet4U.com RSS075P03 Transistors Switching (−30V, −7.5A) RSS075P03 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 (5) (4) 0.4 0.2 0.4Min. zStructure Silicon P-channel MOS FET Each lead has same dimensions zPackaging specifications Package Type RSS075P03 Code Basic ordering unit (pieces) Taping TB 2500 zEquivalent circuit (8) (7) (6) (5) ∗2 ∗1 (1) Source (2) Source (3) Source (4).

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www.DataSheet4U.com RSS075P03 Transistors Switching (−30V, −7.5A) RSS075P03 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 (5) (4) 0.4 0.2 0.4Min. zStructure Silicon P-channel MOS FET Each lead has same dimensions zPackaging specifications Package Type RSS075P03 Code Basic ordering unit (pieces) Taping TB 2500 zEquivalent circuit (8) (7) (6) (5) ∗2 ∗1 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits −30 ±20 ±7.5 ±30 −1.6 −30 2.0 150 −55 to +150 Unit V V A A A A W °C °C (1) (2) 1.75 zApplication Power switching, DC / DC converter. 3.9 6.0 1.27 (8) (1) (3) 5.0 (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗1 ∗1 ∗2 zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a) Limits 62.5 Unit °C / W ∗ Rev.A 1/4 www.DataSheet4U.com RSS075P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on) ∗ resistance − Yfs ∗ 6.0 Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Reverse transfer capacitance Crss td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Total gate charge Qg − Gate-source charge Qgs Gate-drain charge − Qgd ∗Pulsed Typ. − − − − 15 22 25 − 2900 540 430 20 35 85 90 30 5.5 12 Max. ±10 − −1 −2.5 21 31 35 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −7.5A, VGS= −10V ID= −4.0A, VGS= −4.5V ID= −4.0A, VGS= −4.0V VDS= −10V, ID= −4.0A VDS= −10V VGS=0V f=1MHz ID= −4.0A VDD −15V VGS= −10V RL=3.75Ω RGS=10Ω VDD −15V VGS= −5V ID= −7.5A Body diode characteristics (source-drain characteristics) VSD Forward voltage − − −1.2 V IS= −1.6A, VGS=0V Rev.A 2/4 www.DataSheet4U.com RSS075P03 Transistors zElectrical characteristic curves VDS= −10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 100 100 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS= −10V Pulsed DRAIN CURRENT : −ID (A) 1 0.1 10 VGS= −4V VGS= −4.5V VGS= −10V 10 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 0.1 1 10 1 0.1 1 10 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) REVERSE DRAIN CURRENT : −IDR (A) VGS= −4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 100 VGS= −4V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=0V Pulsed 1 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 0.1 1 10 1 0.1 1 10 0.01 0.0 0.5 1.0 1.5 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Static Drain-Source On-State vs. Drain Current Fig.5 Static Drain-Source On-State vs. Drain Current Fig.6 Reverse Drain Current Source-Drain Current 10000 GATE-SOURCE VOLTAGE : −VGS (V) SWITCHING TIME : t (ns) Ta=25°C f=1MHz VGS=0V Ciss 10000 CAPACITANCE : C (pF) 1000 Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed 8 7 6 5 4 3 2 1 0 0 5 10 15 20 Ta=25°C VDD= −15V ID= −7.5A RG=10Ω Pulsed tf 100 1000 td (off) tr Coss Crss 10 td (on) 100 0.01 0.1 1 10 100 1 0.01 0.1 1 10 25 30 35 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics Rev.A 3/4 www.DataSheet4U.com RSS075P03 Transistors zMeasurement circuits VGS ID RL D.U.T. VDS VGS 10% 90% 90% 90% 10% td(off) toff tr RG VDD VDS 10% td(on) ton tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform Rev.A 4/4 www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without .


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