Document
www.DataSheet4U.com
RSS075P03
Transistors
Switching (−30V, −7.5A)
RSS075P03
zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm)
SOP8
(5) (4)
0.4
0.2
0.4Min.
zStructure Silicon P-channel MOS FET
Each lead has same dimensions
zPackaging specifications
Package Type RSS075P03 Code Basic ordering unit (pieces) Taping TB 2500
zEquivalent circuit
(8) (7) (6) (5)
∗2 ∗1
(1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
Limits −30 ±20 ±7.5 ±30 −1.6 −30 2.0 150 −55 to +150
Unit V V A A A A W °C °C
(1)
(2)
1.75
zApplication Power switching, DC / DC converter.
3.9 6.0
1.27
(8)
(1)
(3)
5.0
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗1 ∗1 ∗2
zThermal resistance (Ta=25°C)
Parameter Channel to ambient
∗ Mounted on a ceramic board.
Symbol Rth (ch-a)
Limits 62.5
Unit °C / W
∗
Rev.A
1/4
www.DataSheet4U.com
RSS075P03
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on) ∗ resistance − Yfs ∗ 6.0 Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Reverse transfer capacitance Crss td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Total gate charge Qg − Gate-source charge Qgs Gate-drain charge − Qgd
∗Pulsed
Typ. − − − − 15 22 25 − 2900 540 430 20 35 85 90 30 5.5 12
Max. ±10 − −1 −2.5 21 31 35 − − − − − − − − − − −
Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −7.5A, VGS= −10V ID= −4.0A, VGS= −4.5V ID= −4.0A, VGS= −4.0V VDS= −10V, ID= −4.0A VDS= −10V VGS=0V f=1MHz ID= −4.0A VDD −15V VGS= −10V RL=3.75Ω RGS=10Ω VDD −15V VGS= −5V ID= −7.5A
Body diode characteristics (source-drain characteristics) VSD Forward voltage − − −1.2
V
IS= −1.6A, VGS=0V
Rev.A
2/4
www.DataSheet4U.com
RSS075P03
Transistors
zElectrical characteristic curves
VDS= −10V Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=25°C Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
10
100
100
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
VGS= −10V Pulsed
DRAIN CURRENT : −ID (A)
1
0.1
10
VGS= −4V VGS= −4.5V VGS= −10V
10
0.01
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1 0.1
1
10
1 0.1
1
10
GATE-SOURCE VOLTAGE : −VGS (V)
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
REVERSE DRAIN CURRENT : −IDR (A)
VGS= −4.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
100
100
VGS= −4V Pulsed
10
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
VGS=0V Pulsed
1
10
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
10
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
0.1
1 0.1
1
10
1 0.1
1
10
0.01 0.0
0.5
1.0
1.5
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.4 Static Drain-Source On-State vs. Drain Current
Fig.5 Static Drain-Source On-State vs. Drain Current
Fig.6 Reverse Drain Current Source-Drain Current
10000
GATE-SOURCE VOLTAGE : −VGS (V)
SWITCHING TIME : t (ns)
Ta=25°C f=1MHz VGS=0V
Ciss
10000
CAPACITANCE : C (pF)
1000
Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed
8 7 6 5 4 3 2 1 0 0 5 10 15 20
Ta=25°C VDD= −15V ID= −7.5A RG=10Ω Pulsed
tf
100
1000
td (off) tr
Coss Crss
10
td (on)
100 0.01
0.1
1
10
100
1 0.01
0.1
1
10
25
30
35
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.A
3/4
www.DataSheet4U.com
RSS075P03
Transistors
zMeasurement circuits
VGS
ID RL D.U.T.
VDS
VGS
10% 90% 90% 90% 10% td(off) toff tr
RG VDD
VDS
10% td(on) ton tr
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
VG
VGS ID RL IG (Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Rev.A
4/4
www.DataSheet4U.com
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without .