RSS085N05

www.DataSheet4U.com RSS085N05 Transistor 4V Drive Nch MOS FET RSS085N05 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) ÍÑÐè ëòð ðòì øè÷ ø ë÷ ïòéë Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). ï°·² ³¿®µ øï÷ ø ì÷ ïòîé ðòî Applications Power switching , DC / DC converter, Inverter Û¿½¸ ´»¿¼ ¸¿- -¿³» ¼·³»²-·±²- Packaging dimensions п½µ¿¹» ̧°» ÎÍÍðèëÒðë ݱ¼» Þ¿-·½ ±®¼»®·²¹ «²·¬ ø°·»½»-÷ Ì¿°·²¹ ÌÞ îëðð Absolute maximum ratings (Ta=25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg Limits 45 20 ±8.5 ±34 1.6 34 2 150 -55 to +150 Unit V V A A A A W o o Equivalent circuit øè÷ øé÷ øê÷ øë÷ øè÷ øé÷ øê÷ øë÷ î ï øï÷ øî÷ øí÷ øì÷ Total power dissipation Chanel temperature Range of Storage temperature *1 PW 10 Duty cycle 1 *2 Mounted on a ceramic board øï÷ øî÷ øí÷ øì÷ C C ï ÛÍÜ Ð®±¬»½¬·±² Ü·±¼»ò î Þ±¼§ Ü·±¼»ò øï÷ øî÷ øí÷ øì÷ øë÷ øê÷ øé÷ øè÷ ͱ«®½» ͱ«®½» ͱ«®½» Ù¿¬» Ü®¿·² Ü®¿·² Ü®¿·² Ü®¿·² ß °®±¬»½¬·±² ¼·±¼» ·- ·²½´«¼»¼ ¾»¬©»»² ¬¸» ¹¿¬» ¿²¼ ¬¸» -±«®½» ¬»®³·²¿´- ¬± °®±¬»½¬ ¬¸» ¼·±¼» ¿¹¿·²-¬ -¬¿¬·½ »´»½¬®·½·¬§ ©¸»² ¬¸» °®±¼«½¬ ·- ·² «-»òË-» ¿ °®±¬»½¬·±² ½·®½«·¬ ©¸»² ¬¸» º·¨»¼ ª±´¬¿¹» ¿®» »¨½»»¼»¼ò Thermal resistance Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a) * Limits 62.5 Unit o C/W 1/4 www.DataSheet4U.com RSS085N05 Transistor Electrical ch...