NTP2955

NTP2955 MOSFET – Power, Single, P-Channel, TO-220 -60 V, -12 A Features Low RDS(on) Rugged Performance Fast Switching These are Pb−Free Devices* Applications Industrial Automotive Power Supplies MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TC = 25°C TC = 85°C TC = 25°C VDSS VGS ID PD −60 ±20 −12 −9.0 62.5 Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C ID PD −2.4 −1.8 2.4 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = −30 V, VG = −10 V, IPK = −12 A, L = 3.0 mH, RG = 3.0 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TTSJT,G IS EAS −42 −55 to 175 −12 216 TL 260 Unit V V A W A W A °C A mJ °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case RqJC 2.4 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 62.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com V(BR)DSS −60 V RDS(on) Typ 156 mW @ −10 V ID MAX −12 A P−Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT D 12 3 TO−220 CASE 221A STYLE 5 ...