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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT NPN Switching Transistor
VOLTAGE 40 Volts
APPLICATION
* Telephony and proferssional communction equipment. * Other switching applications.
CH3904M1PT
CURRENT 0.2 Ampere
FEATURE
* Small surface mounting type. (FBPT-723) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch.
0.5±0.05 1.2±0.05
FBPT-723
1.2±0.05
CONSTRUCTION
* NPN Switching Transistor
0.05±0.04
0.84±0.05 0.32±0.05
0.15(REF.) 0.47(REF.)
(3)
CIRCUIT
1
3
0.28±0.05
(2)
(1)
0.23(REF.)
0.22±0.05
2
0.25±0.05
Dimensions in millimeters
FBPT-723
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 40 6 200 200 100 150 +150 150 +150 V V V mA mA mA mW °C °C °C
2006-07
UNIT
RATING CHARACTERISTIC CURVES ( CH3904M1PT )
CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise Þgure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz 60 80 100 60 30 − − 650 − − − 300 − − − 300 − − 200 300 850 950 4 8 − 5 mV mV mV mV pF pF MHz dB − − MIN. MAX. 50 50 UNIT nA nA
Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA − − − − − − 65 35 35 240 200 50 ns ns ns ns ns ns
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RATING CHARACTERISTIC CURVES ( CH3904M1PT )
Figure 1. Power Derating
COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(V)
200 1.0
Figure 2. Collector-Emitter saturation voltage Characteristic
Ic/IB =10
POWER DISSIPATION, PD(mW)
160
120
0.1
80
40
0
0
20
40
60
80
100
120
140
160
180
200
0 0.1
1
10
100
1000
AMBIENT TEMPERATURE, TA(OC)
COLLECTOR CURRENT, IC(mA)
Figure 3. DC Current Gain
1000
VCE=10V Ta = 125oC
DC CURRENT GAIN, hFE
100
Ta = -25oC
Ta = 25oC
10
1 0.1
1.0
10
100
1000
COLLECTOR CURRENT, IC(mA)
.