N2NE10

® STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET™ POWER MOSFET TYPE STN2NE10 VDSS 100 V RDS(on) < 0.4 Ω ID 2A PRELIMINARY DATA s TYPICAL RDS(on) = 0.33 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100 % AVALANCHE TESTED 2 s APPLICATION ORIENTED CHARACTERIZATION )DESCRIPTION t(sThis Power Mosfet is the latest development of cSTMicroelectronics unique "Single Feature uSize™ " stip-based process. The resulting transidstor shows extremely high packing density for low roon-resistance, rugged avalanche characteristics Pand less critical alignment steps therefore a retemarkable manufacturing reproducibility. leAPPLICATIONS sos DC MOTOR CONTROL (DISK DRIVES,etc.) bs DC-DC & DC-AC CONVERTERS Os SYNCHRONOUS RECTIFICATION 3 2 1 SOT-223 INTERNAL SCHEMATIC DIAGRAM roduct(s) -ABSOLUTE MAXIMUM RATINGS PSymbol Parameter teVDS Drain-source Voltage (VGS = 0) leVDGR oVGS bsID O ID Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Value 100 100 ± 20 2 1.3 Unit V V V A A IDM() Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor 8 2.5 0.02 A W W/oC dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature () Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 6 -65 to 150 150 (1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX V/ns oC oC Ja...