CMT20N50 Datasheet (data sheet) PDF





CMT20N50 Datasheet, POWER FIELD EFFECT TRANSISTOR

CMT20N50   CMT20N50  

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CMT20N50 www.DataSheet4U.com POWER FIEL D EFFECT TRANSISTOR FEATURES ! ! ! ! ! ! Robust High Voltage Termination Avala nche Energy Specified Source-to-Drain D iode Recovery Time Comparable to a Disc rete Fast Recovery Diode Diode is Chara cterized for Use in Bridge Circuits IDS S and VDS(on) Specified at Elevated Tem perature Isolated Mounting Hole Reduces Mounting Hardware GENERAL DESCRIPTION This high voltage MOSFET uses an advan ced termination scheme to provide enhan ced voltage-blocking capability without degrading performance over time. In ad dition, this advanced MOSFET is designe d to withstand high energy in avalanche and commutation modes. T

CMT20N50 Datasheet, POWER FIELD EFFECT TRANSISTOR

CMT20N50   CMT20N50  
he new energy efficient design also offe rs a drain-to-source diode with a fast recovery time. Designed for high voltag e, high speed switching applications in power supplies, converters and PWM mot or controls, these devices are particul arly well suited for bridge circuits wh ere diode speed and commutating safe op erating areas are critical and offer ad ditional and safety margin against unex pected voltage transients. PIN CONFIGU RATION TO-3P Top View SYMBOL D G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current - Continuous - Pu lsed Gate-to-Source Voltage - Continu e - Non-repetitive Total Power Dissip ation Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 2 0A, L = 1.38mH, RG = 25Ω) Thermal Res istance - Junction to Case - Juncti on to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from cas e for 10 seconds (1) Pulse Width and fr equency is limited by TJ(max) and therm al response θJC θJA TL 0.50 40 260 ℃/W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD Value 20 60 ±20 ±40 250 2.00 -55 to 150 276 V V W W/℃ ℃ mJ Unit A 2002/07/24 Preliminary Champion Mic roelectronic Corporation Page 1 CMT20N50 www.DataSheet4U.com POWER FIELD EFFECT TR








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