CMT2301 Datasheet (data sheet) PDF





CMT2301 Datasheet, P-Channel Enhancement Mode MOSFET

CMT2301   CMT2301  

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CMT2301 www.DataSheet4U.com P-CHANNEL E NHANCEMENT MODE MOSFET FEATURES -20V/-2 .3A ,RDS(ON)=130 mΩ@VGS=-4.5V -20V/-1 .9A ,RDS(ON)=190 mΩ@VGS=-2.5V Super h igh density cell design for extremely l ow RDS(ON) Exceptional on-resistance an d maximum DC current capability SOT-23- 3 package design GENERAL DESCRIPTION T he CMT2301 is the P-Channel logic enhan cement mode power field effect transist ors are produced using high cell densit y, DMOS trench technology. This high de nsity process is especially tailored to minimize on-state resistance. These de vices are particularly suited for low v oltage application such as cellular pho ne and notebook computer powe

CMT2301 Datasheet, P-Channel Enhancement Mode MOSFET

CMT2301   CMT2301  
r management and other battery powered c ircuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Man agement in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter P IN CONFIGURATION SOT-23-3 SYMBOL D To p View 3 G DRAIN SOURCE GATE S 1 2 P-Channel MOSFET ORDERING INFORMATION Part Number CMT2301M233 CMT2301GM233* * Note: G : Suffix for Pb Free Product Pa ckage SOT-23-3 SOT-23-3 2005/01/05 Ch ampion Microelectronic Corporation Pag e 1 CMT2301 www.DataSheet4U.com P-CHA NNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain- to- Sourc e Voltage Gate-to-Source Voltage Contin uous Drain Current(TJ=150℃) Pulsed Dr ain Current Continuous Source Current(D iode Conduction) Power Dissipation Oper ating Junction Temperature Storage Temp erature Range Thermal Resistance-Juncti on to Ambient TA=25℃ TA=70℃ TA=25 TA=70℃ Symbol VDSS VGSS ID IDM IS P D TJ TSTG RθJA Value -20 ±8 -2.5 -1.5 -10 -1.6 1.25 0.8 150 -55/150 120 Unit V V A A A W ℃ ℃ ℃/W ELECTRICAL CHARACTERISTICS Unless otherwise specif ied, TJ = 25℃. CMT2301 Characteristic Static Drain-Source Breakdown Voltage (VGS = 0 V, ID = -250μA) Gate Threshol d Voltage (VDS = VGS, ID = -250μA) Gate Leakage Current (VDS =0 V, VGS =








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