IR2111PBF

www.DataSheet4U.com Data Sheet No. PD60028-M IR2111(S) & (PbF) HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Internally set deadtime High side output in phase with input Also available LEAD-FREE Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V max. 200 mA / 420 mA 10 - 20V 750 & 150 ns 650 ns Description Packages The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum 8-Lead PDIP driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. 8-Lead SOIC Typical Connection up to 600V VCC VCC IN VB HO VS TO LOAD IN COM LO (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please...