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HRF302A

Hitachi Semiconductor

Silicon Schottky Barrier Diode

www.DataSheet4U.com HRF302A Silicon Schottky Barrier Diode for Rectifying ADE-208-244C(Z) Rev 3 Features • Low forward...


Hitachi Semiconductor

HRF302A

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www.DataSheet4U.com HRF302A Silicon Schottky Barrier Diode for Rectifying ADE-208-244C(Z) Rev 3 Features Low forward voltage drop and suitable for high effifiency rectifying. DO-214 is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRF302A Laser Mark 302A Package Code DO-214 Outline Cathode mark Mark 302A 1 2 Lot No. 1. Cathode 2. Anode www.DataSheet4U.com HRF302A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V *1 RRM Value 20 3 Unit V A A °C °C I o*1 I FSM Tj Tstg *2 100 125 –40 to +125 Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current ESD-Capability Thermal resistance Symbol VF IR — Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min — — 250 — — Typ — — — 100 34 Max 0.40 1.0 — — — Unit V mA V Test Condition I F = 3A VR = 20V C = 200pF , R = 0Ω , Both forward and reverse direction 1 pulse. *1 ° C/W Glass epoxy board Tc = 25° C Land size 3.5 6.8 2.0 Unit: mm 2 www.DataSheet4U.com HRF302A Main Characteristic 2 10 10 Pulse test -2 Pulse test Ta=75°C Forward current I F (A) 10 Ta=75°C 1.0 Reverse current IR (A) 10 -3 10 -1 Ta=25°C 10 -4 Ta=25°C 10 -2 10 -5 10 -3 0 0.1 0.2 0.3 0.4 0.5 0.6 10 -6 0 Forward voltage V F (V) Fig.1 Forward current Vs...




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