HMC-ALH313

www.DataSheet4U.com v01.1207 HMC-ALH313 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz Features Noise Figure: 3 dB Gain: 20 dB P1dB Output Power: +12 dBm Supply Voltage: +2.5V @ 52 mA Die Size: 1.80 x 0.73 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH313 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Test Equipment & Sensors Military & Space Functional Diagram General Description The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 27 and 33 GHz. The amplifier provides 20 dB of gain, a 3 dB noise figure and +12 dBm of output power at 1 dB gain compression while requiring only 52 mA from a +2.5V supply voltage. This amplifier die is ideal for use as a LNA or driver amplifier, and may be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.30 mm2) . Electrical Specifi cations [1], TA = +25° C, Vdd= 2.5V, Idd = 52mA [2] Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Idd total = 52 mA 10 18 Min. Typ. 27 - 33 20 0.03 3 12 14 12 52 3.5 Max. Units GHz dB dB / °C dB dB dB dBm mA 1 - 150 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 9...