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Effect Transistor. CHM3178JPT Datasheet

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Effect Transistor. CHM3178JPT Datasheet






CHM3178JPT Transistor. Datasheet pdf. Equivalent




CHM3178JPT Transistor. Datasheet pdf. Equivalent





Part

CHM3178JPT

Description

N-Channel Enhancement Mode Field Effect Transistor



Feature


www.DataSheet4U.com CHENMKO ENTERPRISE CO.,LTD CHM3178JPT SURFACE MOUNT N-Chan nel Enhancement Mode Field Effect Trans istor VOLTAGE 30 Volts APPLICATION * Se rvo motor control. * Power MOSFET gate drivers. * Other switching applications . CURRENT 7.8 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dens e cell design for extremely low RDS(ON) . * High power and.
Manufacture

Chenmko Enterprise

Datasheet
Download CHM3178JPT Datasheet


Chenmko Enterprise CHM3178JPT

CHM3178JPT; current handing capability. * Lead free product is acquired. 1 SO-8 4.06 (0.1 60) 3.70 (0.146) 8 CONSTRUCTION * N-Ch annel Enhancement 5.00 (0.197) 4.69 (0 .185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) . 25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIR CUIT 8 D1 D1 D2 D2 5 1 4 S1 G1 S2 G2 Dimensions in mi.


Chenmko Enterprise CHM3178JPT

llimeters SO-8 Absolute Maximum Rating s Symbol Parameter TA = 25°C unless o therwise noted CHM3178JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Contin uous 30 V V ±20 7.8 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Oper ating Temperature Range Storage Tempera ture Range (Note 3) A 30 2000 -55 to 1 50 -55 to 150 mW °C .


Chenmko Enterprise CHM3178JPT

°C Note : 1. Surface Mounted on FR4 Bo ard , t <=10sec 2. Pulse Test , Pulse w idth <= 300us , Duty Cycle <= 2% 3. Rep etitive Rating , Pulse width linited by maximum junction temperature 4. Guaran teed by design , not subject to product ion trsting Thermal characteristics R JA Thermal Resistance, Junction-to-Amb ient (Note 1) 62.5 °C/W 2006-09 RATIN G CHARACTERISTIC CURV.

Part

CHM3178JPT

Description

N-Channel Enhancement Mode Field Effect Transistor



Feature


www.DataSheet4U.com CHENMKO ENTERPRISE CO.,LTD CHM3178JPT SURFACE MOUNT N-Chan nel Enhancement Mode Field Effect Trans istor VOLTAGE 30 Volts APPLICATION * Se rvo motor control. * Power MOSFET gate drivers. * Other switching applications . CURRENT 7.8 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dens e cell design for extremely low RDS(ON) . * High power and.
Manufacture

Chenmko Enterprise

Datasheet
Download CHM3178JPT Datasheet




 CHM3178JPT
www.DataSheet4U.com
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM3178JPT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 7.8 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. (SO-8 )
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
* Lead free product is acquired.
CONSTRUCTION
* N-Channel Enhancement
CIRCUIT
8D1 D1 D2 D25
SO-8
4.06 (0.160)
3.70 (0.146)
5.00 (0.197)
4.69 (0.185)
1
4
8
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
6.20 (0.244)
5.80 (0.228)
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
.25 (0.010)
.17 (0.007)
1S1 G1 S2 G24
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
Dimensions in millimeters
CHM3178JPT
30
±20
7.8
30
2000
-55 to 150
-55 to 150
62.5
SO-8
Units
V
V
A
mW
°C
°C
°C/W
2006-09




 CHM3178JPT
RATING CHARACTERISTIC CURVES ( CHM3178JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
www.DatSaySmhbeoelt4UP.caorammeter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VDS = 30 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
30 V
1 µA
+100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA
VGS=10V, ID=6.3A
VGS=4.5V, ID=5.0A
1 3V
18 22
m
24 30
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
ton Turn-On Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
VDS=15V, ID=6A
VGS=5V
VDD= 15V
ID = 1A, VGS= 10 V
RGEN= 6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward Voltage IS = 2.3A, VGS= 0 V (Note 2)
10.4 13
3.5
3.8
16 30
9 20
31 60
10 20
nC
nS
2.3 A
1.2 V




 CHM3178JPT
www.DataSheet4U.com
RATING CHARACTERISTIC CURVES ( CHM3178JPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
25
VG S =10,8,6,5V
20
VG S =4 V
15
10
5
VG S =3 V
0
0 1.0 2.0 3.0 4.0
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
15
12
9
6
3
0
1.0
TJ=125°C
TJ=-55°C
TJ=25°C
1.5 2.0
2.5 3.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
3.5
4.0
Figure 3. Gate Charge
10
VDS=15V
ID=6A
8
6
4
2
Figure 4. On-Resistance Variation with
2.2
VGS=10V
Temperature
ID=6.3A
1.9
1.6
1.3
1.0
0.7
0 0.4
05
10
15 20
-100
-50
0
50
100 150
200
Qg , TOTAL GATE CHARGE (nC)
TJ , JUNCTION T EMPERATURE (°C)
Figure 5. Gate Threshold Variation with
Temperature
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50
75 100
TJ , JUNCTION T EMPERATURE (°C)
125
150






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