HMC635

www.DataSheet4U.com v00.1107 HMC635 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Applications Features Gain: 19.5 dB P1dB: +23 dBm Output IP3: +29 dBm Saturated Power: +24 dBm @ 15% PAE Supply Voltage: +5V @ 280 mA 50 Ohm Matched Input/Output Die Size: 1.95 x 0.84 x 0.10 mm 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP The HMC635 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT LO Driver for Mixers Military & Space Functional Diagram General Description The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply ...