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SST12LP08 Dataheets PDF



Part Number SST12LP08
Manufacturers Silicon Storage Technology
Logo Silicon Storage Technology
Description High-Gain Power Amplifier
Datasheet SST12LP08 DatasheetSST12LP08 Datasheet (PDF)

PCROONPFRIIDEETANTRIYALAND 2.4 GHz High-Power, High-Gain Power Amplifier A Microchip Technology Company SST12LP08 Data Sheet The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for linear high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, it typically provides 30 dB gain with 34% power-added efficiency, while meeting 802.11b/g spectrum mask at 23.5 dBm. The SS.

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PCROONPFRIIDEETANTRIYALAND 2.4 GHz High-Power, High-Gain Power Amplifier A Microchip Technology Company SST12LP08 Data Sheet The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for linear high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, it typically provides 30 dB gain with 34% power-added efficiency, while meeting 802.11b/g spectrum mask at 23.5 dBm. The SST12LP08 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin and is offered in both 12-contact XQFN and 6-contact XSON packages. Features • High Gain: – Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C • High linear output power: – >28 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 6 – Meets 802.11g OFDM ACPR requirement up to 23.5 dBm – ~3% added EVM up to 20.


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