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MRF7S18125BHR3 Dataheets PDF



Part Number MRF7S18125BHR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF7S18125BHR3 DatasheetMRF7S18125BHR3 Datasheet (PDF)

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz. Power Gain — 16.5 d.

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Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz. Power Gain — 16.5 dB Drain Efficiency — 55% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz). Power Gain — 17 dB Drain Efficiency — 39% Spectral Regrowth @ 400 kHz Offset = - 60 dBc Spectral Regrowth @ 600 kHz Offset = - 74 dBc EVM — 2.6% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ] 140 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125BHR3 MRF7S18125BHSR3 1930- 1990 MHz, 125 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S18125BHR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S18125BHSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 125 W CW Case Temperature 81°C, 71 W CW Symbol RθJC Value (2,3) 0.31 0.35 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF7S18125BHR3 MRF7S18125BHSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics www.DataSheet4U.com Test Methodology Class 1B (Minimum) A (Minimum) IV (Minimum) Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 316 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.16 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Power Gain Drain Efficiency Input Return Loss Crss Coss Ciss — — — 1.15 673 309 — — — pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 4 0.1 1.9 2.7 5.3 0.2 2.7 — 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW, f = 1930 MHz Gps ηD IRL 15 51 — 16.5 55 - 12 18 — -7 dB % dB 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S18125BHR3 MRF7S18125BHSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) www.DataSheet4U.com Characteristic Symbol P1dB IMDsym Min — — Typ 140 10 Max — — Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1930 - 1990 MHz Bandwidth Pout @ 1 dB Compression Point IMD Symmetry @ 125 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 125 W CW Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 125 W CW Average Group Delay @ Pout = 125 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 125 W CW, f = 1960 MHz, Six Sigma Window Gain Var.


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