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MRF377HR3 Dataheets PDF



Part Number MRF377HR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field-Effect Transistors
Datasheet MRF377HR3 DatasheetMRF377HR3 Datasheet (PDF)

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field--Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470.

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LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field--Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470--860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Drain Efficiency ≥ 21% ACPR ≤ --58 dBc • Typical Broadband ATSC 8VSB Performance @ 470--860 MHz, 32 Volts, IDQO=u2tp0u0t0PmowAer — 80 Watts Avg. Power Gain ≥ 16.5 dB Drain Efficiency ≥ 27.5% IMD ≥ --31.3 dBc • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Device Designed for Push--Pull Operation Only • Integrated ESD Protection • Excellent Thermal Stability • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF377H Rev. 2, 3/2009 MRF377HR3 470 -- 860 MHz, 45 W AVG., 32 V LATERAL N--CHANNEL RF POWER MOSFET CASE 375G--04, STYLE 1 NI--860C3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C VDSS VGS ID PD -- 0.5, +65 -- 0.5, +15 17 648 3.7 Vdc Vdc Adc W W/°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Tstg -- 65 to +150 °C TC 150 °C TJ 200 °C CW 235 W 1.38 W/°C Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 81°C, 105 W CW Case Temperature 77°C, 45 W CW RθJC 0.27 0.29 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2006, 2009. All rights reserved. RF Device Data Freescale Semiconductor MRF377HR3 1 LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Off Characteristics (1) Drain--Source Breakdown Voltage (4) (VGS = 0 Vdc, ID =10 μA) Zero Gate Voltage Drain Current (4) (VDS = 32 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) V(BR)DSS IDSS IGSS VGS(th) 65 — — — On Characteristics Gate Quiescent Voltage (3) (VDS = 32 Vdc, ID = 2000 mAdc) VGS(Q) 2.5 Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 3 A) VDS(on) — Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — Functional Tests (3) (In DVBT OFDM Single--Channel, Narrowband Fixture, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) Gps 16.5 Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) ηD 21 Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) ACPR — Typical Performances (3) (In DVBT OFDM Single--Channel, Broadband Fixture, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Gps — — — — — 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurement made with device in push--pull configuration. 4. Drains are tied together internally as this is a total device value. Class 1 (Minimum) M3 (Minimum) 7 (Minimum) Typ Max —— —1 —1 2.8 — 3.5 4.5 0.27 — 3.2 — 18.2 22.9 --59.2 — — --57 17.6 17.6 17.4 17.4 16.8 — — — — — Unit Vdc μAdc μAdc Vdc Vdc Vdc pF dB % dBc dB (continued) MRF377HR3 2 RF Device Data Freescale Semiconductor LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz ηD — — — — — Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 6.


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