MRF5S21045NR1 Datasheet - Freescale Semiconductor

MRF5S21045NR1 Datasheet - RF Power Field Effect Transistors

MRF5S21045NR1   MRF5S21045NR1  

Datasheet: MRF5S21045NR1 datasheet

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Description: Freescale Semicondu ctor Technical Data Document Number: M RF5S21045 Rev. 1, 7/2005 RF Power Fiel d Effect Transistors N - Channel Enhan cement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarri er amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - c arrier W - CDMA Performance: VDD = 28 V olts, IDQ = 500 mA, Pout = 10 Watts Avg ., Full Frequency Band, Channel Bandwid th = 3.84 MHz, PAR = 8.5 dB @ 0.01% Pro bability on CCDF. Power Gain — 14.5 d B Drain Efficiency — 25.5% IM3 @ 10 MHz

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Freescale Semiconductor


RF Power Field Effect Transistors

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