SI4435BDY

Si4435BDY www.DataSheet4U.com Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) −9.1 −6.9 rDS(on) (W) 0.020 @ VGS = −10 V 0.035 @ VGS = −4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS Compliant Available APPLICATIONS D Load Switches D Battery Switch SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4435BDY-T1 Si4435BDY-T1—E3 (Lead (Pb)-Free) 8 7 6 5 D D D D G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −9.1 −7.3 −50 −2.1 2.5 1.6 −55 to 150 −7 −5.6 A −1.25 1.5 0.9 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72123 S-50694—Rev. C, 18-Apr-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 18 Maximum 50 85 22 Unit _C/W 1 Si4435BDY www.DataSheet4U.com Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current O...