FDB6670AL
www.DataSheet4U.com
FDP6670AL/FDB6670AL
May 2003
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench® MOSFET
Genera...
Description
www.DataSheet4U.com
FDP6670AL/FDB6670AL
May 2003
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
80 A, 30 V RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.5 V
Critical DC electrical parameters specified at elevated temperature High performance trench technology for extremely low RDS(ON) 175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ± 20
(Note 1) (Note 1)
Units
V V A W W/°C °C
80 240 68 0.45 –65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.2 62.5 °C/W °C/W
Pa...
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