FDB6670AL. 6670AL Datasheet

6670AL FDB6670AL. Datasheet pdf. Equivalent

Part 6670AL
Description FDB6670AL
Feature www.DataSheet4U.com FDP6670AL/FDB6670AL May 2003 FDP6670AL/FDB6670AL N-Channel Logic Level PowerT.
Manufacture Fairchild Semiconductor
Datasheet
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6670AL
www.DataSheet4U.com
May 2003
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
Features
80 A, 30 V
RDS(ON) = 6.5 m@ VGS = 10 V
RDS(ON) = 8.5 m@ VGS = 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low RDS(ON)
175°C maximum junction temperature rating
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6670AL
FDB6670AL
13’’
FDP6670AL
FDP6670AL
Tube
G
Ratings
30
± 20
80
240
68
0.45
–65 to +175
2.2
62.5
Tape width
24mm
n/a
S
Units
V
V
A
W
W/°C
°C
°C/W
°C/W
Quantity
800 units
45
©2003 Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)



6670AL
www.DataSheet4U.com
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V,
ID = 80 A
IAR Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ± 20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 40 A
VGS = 4.5 V, ID = 37 A
VGS= 10 V, ID = 40 A, TJ=125°C
VGS = 10 V, VDS = 10 V
VDS = 10V,
ID = 40 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 10V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15 V,
VGS = 5 V
ID = 40 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 40 A (Note 1)
trr
Diode Reverse Recovery Time
IF = 40 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
Min Typ Max Units
114 mJ
80 A
30
24
V
mV/°C
1
± 100
µA
nA
1 1.9
–5
3V
mV/°C
5.2 6.5
6.5 8.5
7.2 9.7
80
115
m
A
S
2440
580
250
1.4
pF
pF
pF
13 23
13 23
42 68
15 27
24 33
7
9
ns
ns
ns
ns
nC
nC
nC
80
0.9 1.3
34
24
A
V
nS
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP6670AL/FDB6670AL Rev D(W)







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