2SB561
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD467
Outline
RENESA...
2SB561
Silicon
PNP Epitaxial
Application
Low frequency power amplifier Complementary pair with 2SD467
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
REJ03G0645-0200 (Previous ADE-208-1023)
Rev.2.00 Aug.10.2005
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature
3 2 1
Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg
Ratings –25 –20 –5 –0.7 –1.0 0.5 150
–55 to +150
(Ta = 25°C)
Unit V V V A A W °C °C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SB561
Electrical Characteristics
Item
Symbol Min Typ Max
Collector to base breakdown voltage
V(BR)CBO
–25
—
—
Collector to emitter breakdown voltage V(BR)CEO –20
—
—
Emitter to base breakdown voltage
V(BR)EBO
–5
—
—
Collector cutoff current DC current transfer ratio
ICBO
—
— –1.0
hFE*1
85
—
240
Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance
VCE(sat) VBE fT Cob
— –0.2 –0.5
— –0.75 –1.0
—
350
—
—
20
—
Note: 1. The 2SB561 is grouped by hFE as follows.
B
C
85 to 170 120 to 240
Unit V V V µA
V V MHz pF
(Ta = 25°C)
Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, IC = –0.15 A (Pulse test) IC = –0.5 A, IB = –0.05 A VCE = –1 V, IC = –0.15 A VCE = –1 V, IC = –0.15 A V...