ST9013

ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor ST 9012 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Collector Emitter Voltage VCEO 30 Emitter Base Voltage VEBO 5 Collector Current IC 800 Peak Collector Current ICM 1 Base Current Power Dissipation IB 100 Ptot 6251) Junction Temperature Tj 150 Storage Temperature Range TS -55 to +150 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case Unit V V mA A mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. DC Current Gain at VCE=1V, IC=50mA Current Gain Group G hFE 110 - 183 H hFE 177 - 250 I hFE 250 - 380 at VCE=1V, IC=500mA hFE 40 - - Collector Cutoff Current at VCB=31V Collector Emitter Breakdown Voltage ICBO - - 100 at IC=1mA Emitter Base Cutoff Current V(BR)CEO 30 - - at VEB=5.1V Collector Saturation Voltage IEBO - - 100 at IC=500mA, IB=20mA Base...