IRF7338
www.DataSheet4U.com
PD - 94372C
IRF7338
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOS...
Description
www.DataSheet4U.com
PD - 94372C
IRF7338
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 7
D1 D1
N-Ch VDSS 12V
P-Ch -12V
3
6
D2 D2
4
5
P-CHANNEL MOSFET
RDS(on) 0.034Ω 0.150Ω
Top View
Description
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
N-Channel 12 6.3 5.2 26 2.0 1.3 16 ±12 -55 to + 150 ± 8.0 P-Channel -12 -3.0 -2.5 -13
Units
A
W mW/°C V °C
Thermal Resistance
Symbol
RθJL RθJA
Para...
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