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MOSFET ARRAYS. ALD114935 Datasheet

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MOSFET ARRAYS. ALD114935 Datasheet
















ALD114935 ARRAYS. Datasheet pdf. Equivalent













Part

ALD114935

Description

(ALD114835 / ALD114935) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS



Feature


ADVANCED LINEAR DEVICES, INC. e TM EPA D ENA ® B L E D ALD114835/ALD1149 35 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET AR RAY VGS(th)= -3.50V GENERAL DESCRIPTI ON APPLICATIONS ALD114835/ALD114935 a re high precision monolithic quad/dual depletion mode N-Channel MOSFETs matche d at the factory using ALD’s proven E PAD CMOS technology. T.
Manufacture

Advanced Linear Devices

Datasheet
Download ALD114935 Datasheet


Advanced Linear Devices ALD114935

ALD114935; hese devices are intended for low voltag e, small signal applications. They are excellent functional replacements for n ormally-closed relay applications, as t hey are normally on (conducting) withou t any power applied, but could be turne d off or modulated when system power su pply is turned on. These MOSFETs have t he unique characteristics of, when the gate is grounded, .


Advanced Linear Devices ALD114935

operating in the resistance mode for low drain voltage levels and in the curren t source mode for higher voltage levels and providing a constant drain current . ALD114835/ALD114935 MOSFETs are desi gned for exceptional device electrical characteristics match .


Advanced Linear Devices ALD114935

.





Part

ALD114935

Description

(ALD114835 / ALD114935) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS



Feature


ADVANCED LINEAR DEVICES, INC. e TM EPA D ENA ® B L E D ALD114835/ALD1149 35 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET AR RAY VGS(th)= -3.50V GENERAL DESCRIPTI ON APPLICATIONS ALD114835/ALD114935 a re high precision monolithic quad/dual depletion mode N-Channel MOSFETs matche d at the factory using ALD’s proven E PAD CMOS technology. T.
Manufacture

Advanced Linear Devices

Datasheet
Download ALD114935 Datasheet




 ALD114935
ADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD
ENA
®
B
L
E
D
ALD114835/ALD114935
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= -3.50V
GENERAL DESCRIPTION
APPLICATIONS
ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode
N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay ap-
plications, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETs have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current
source mode for higher voltage levels and providing a constant drain current.
ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-
trical characteristics matching. As these devices are on the same monolithic
chip, they also exhibit excellent temperature tracking characteristics. They are
versatile as design components for a broad range of analog applications such
as basic building blocks for current sources, differential amplifier input stages,
transmission gates, and multiplexer applications. Besides matched pair electri-
cal characteristics, each individual MOSFET also exhibits well controlled pa-
rameters, enabling the user to depend on tight design limits. Even units from
different batches and different date of manufacture have correspondingly well
matched characteristics.
These depletion mode devices are built for minimum offset voltage and differ-
ential thermal response, and they are designed for switching and amplifying
applications in single 5V to +/-5V systems where low input bias current, low
input capacitance and fast switching speed are desired. These devices exhibit
well controlled turn-off and sub-threshold charactersitics and therefore can be
used in designs that depend on sub-threshold characteristics.
The ALD114835/ALD114935 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user,
for most applications, connect the V+ pin to the most positive voltage and the
V- and IC pins to the most negative voltage in the system. All other pins must
have voltages within these voltage limits at all times.
FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -3.50V +/- 0.05V
• Nominal RDS(ON) @VGS=0.0V of 540
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
• Functional replacement of Form B (NC) relay
• Zero power fail safe circuits
• Backup battery circuits
• Power failure detector
• Fail safe signal detector
• Source followers and buffers
• Precision current mirrors
• Precision current sources
• Capacitives probes
• Sensor interfaces
• Charge detectors
• Charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors
• Sample and Hold
• Alarm systems
• Current multipliers
• Analog switches
• Analog multiplexers
• Voltage comparators
• Level shifters
PIN CONFIGURATIONS
ALD114835
V-
IC* 1
GN1
DN1
S12
V-
2
3
4
5
M1
V-
DN4 6
GN4 7
M4
IC* 8 V-
V-
16 IC*
M2
V+
15 GN2
14 DN2
13 V+
12 S34
M 3 11 DN3
10 GN3
V- 9 IC*
SCL, PCL PACKAGES
ALD114935
V-
IC* 1
V-
8 IC*
GN1
DN1
S12
2
3
4
M1 M2
V-
7 GN2
6 DN2
5 V-
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL
SAL, PAL PACKAGES
*IC pins are internally connected,
connect to V-
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com




 ALD114935
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = -5V TA = 25°C unless otherwise specified
ALD114835/ALD114935
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
On Drain Current
Forward Transconductance
IDS (ON)
GFS
Min
-3.55
Typ
-3.50
7
5
-1.7
0.0
+1.6
12.0
3.0
1.4
Max
-3.45
20
Transconductance Mismatch
Output Conductance
GFS
GOS
1.8
68
Drain Source On Resistance
RDS (ON)
540
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current1
RDS (ON)
RDS (ON)
BVDSX
IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
CISS
CRSS
ton
toff
10
5
0.5
10
3
2.5
0.1
10
10
60
400
4
200
1
Unit
V
mV
Test Conditions
IDS = 1µA, VDS = 0.1V
µV/ °C
mV/ °C
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
mA VGS = +6.0V, VDS = +5V
VGS = +0.5V, VDS = +5V
mmho
VGS = +0.5V
VDS = +5.5V
%
µmho
VGS = +0.5V
VDS = +5.5V
VDS = 0.1V
VGS = +0.0V
%
%
V IDS = 1.0µA
VGS = -4.5V
pA VGS = -4.5V, VDS =+5V
nA TA = 125°C
pA VDS = 0V, VGS = 5V
nA TA =125°C
pF
pF
ns V+ = 5V, RL= 5K
ns V+ = 5V, RL= 5K
dB f = 100KHz
Notes: 1 Consists of junction leakage currents
ALD114835/ALD114935
Advanced Linear Devices
2 of 11




 ALD114935
PERFORMANCE CHARACTERISTICS OF EPAD®
PRECISION MATCHED PAIR MOSFET FAMILY
ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic
quad/dual N-Channel MOSFETs matched at the factory using ALD’s
proven EPAD® CMOS technology. These devices are intended for
low voltage, small signal applications.
ALD’s Electrically Programmable Analog Device (EPAD) technol-
ogy provides the industry’s only family of matched transistors with
a range of precision threshold values. All members of this family
are designed and actively programmed for exceptional matching of
device electrical characteristics. Threshold values range from -
3.50V Depletion to +3.50V Enhancement devices, including stan-
dard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V,
+0.40V, +0.80V, +1.40V, and +3.30V. ALD can also provide any
customer desired value between -3.50V and +3.50V. For all these
devices, even the depletion and zero threshold transistors, ALD
EPAD technology enables the same well controlled turn-off, sub-
threshold, and low leakage characteristics as standard enhance-
ment mode MOSFETs. With the design and active programming,
even units from different batches and different date of manufacture
have well matched characteristics. As these devices are on the
same monolithic chip, they also exhibit excellent tempco tracking.
This EPAD MOSFET Array product family (EPAD MOSFET) is avail-
able in the three separate categories, each providing a distinctly
different set of electrical specifications and characteristics. The first
category is the ALD110800/ALD110900 Zero-Thresholdmode
EPAD MOSFETs. The second category is the ALD1108xx/
ALD1109xx enhancement mode EPAD MOSFETs. The third cat-
egory is the ALD1148xx/ALD1149xx depletion mode EPAD
MOSFETs. (The suffix “xx” denotes threshold voltage in 0.1 V steps,
for example, xx=08 denotes 0.80V).
currents and channel/junction leakage currents. When negative
signal voltages are applied to the gate terminal, the designer/user
can depend on the EPAD MOSFET device to be controlled, modu-
lated and turned off precisely. The device can be modulated and
turned-off under the control of the gate voltage in the same manner
as the enhancement mode EPAD MOSFET and the same device
equations apply.
EPAD MOSFETs are ideal for minimum offset voltage and differen-
tial thermal response, and they are used for switching and amplify-
ing applications in low voltage (1V to 10V or +/-0.5V to +/-5V) or
ultra low voltage (less than 1V or +/- 0.5V) systems. They feature
low input bias current (less than 30pA max.), ultra low power
(microWatt) or Nanopower (power measured in nanoWatt) opera-
tion, low input capacitance and fast switching speed. These de-
vices can be used where a combination of these characteristics
are desired.
KEY APPLICATION ENVIRONMENT
EPAD( MOSFET Array products are for circuit applications in one
or more of the following operating environments:
* Low voltage: 1V to 10V or +/- 0.5V to +/- 5V
* Ultra low voltage: less than 1V or +/- 0.5V
* Low power: voltage x current = power measured in microwatt
* Nanopower: voltage x current = power measured in nanowatt
* Precision matching and tracking of two or more MOSFETs
ELECTRICAL CHARACTERISTICS
The ALD110800/ALD110900 (quad/dual) are EPAD MOSFETs in
which the individual threshold voltage of each MOSFET is fixed at
zero. The threshold voltage is defined as IDS = 1uA @ VDS = 0.1V
when the gate voltage VGS = 0.00V. Zero threshold devices oper-
ate in the enhancement region when operated above threshold volt-
age and current level (VGS > 0.00V and IDS > 1uA) and subthresh-
old region when operated at or below threshold voltage and cur-
rent level (VGS <= 0.00V and IDS < 1uA). This device, along with
other very low threshold voltage members of the product family,
constitute a class of EPAD MOSFETs that enable ultra low supply
voltage operation and nanopower type of circuit designs, applicable
in either analog or digital circuits.
The ALD1108xx/ALD1109xx (quad/dual) product family features
precision matched enhancement mode EPAD MOSFET devices,
which require a positive bias voltage to turn on. Precision threshold
values such as +1.40V, +0.80V, +0.20V are offered. No conductive
channel exists between the source and drain at zero applied gate
voltage for these devices, except that the +0.20V version has a
subthreshold current at about 20nA.
The ALD1148xx/ALD1149xx (quad/dual) features depletion mode
EPAD MOSFETs, which are normally-on devices when the gate
bias voltage is at zero volt. The depletion mode threshold voltage
is at a negative voltage level at which the EPAD MOSFET turns off.
Without a supply voltage and/or with VGS = 0.0V the EPAD
MOSFET device is already turned on and exhibits a defined and
controlled on-resistance between the source and drain terminals.
The turn-on and turn-off electrical characteristics of the EPAD
MOSFET products are shown in the Drain-Source On Current vs
Drain-Source On Voltage and Drain-Source On Current vs Gate-
Source Voltage graphs. Each graph show the Drain-Source On
Current versus Drain-Source On Voltage characteristics as a func-
tion of Gate-Source voltage in a different operating region under
different bias conditions. As the threshold voltage is tightly speci-
fied, the Drain-Source On Current at a given gate input voltage is
better controlled and more predictable when compared to many
other types of MOSFETs.
EPAD MOSFETs behave similarly to a standard MOSFET, there-
fore classic equations for a n-channel MOSFET applies to EPAD
MOSFET as well. The Drain current in the linear region (VDS <
VGS - VGS(th)) is given by:
ID = u . COX . W/L . [VGS - VGS(th) - VDS/2] . VDS
where:
u = Mobility
COX = Capacitance / unit area of Gate electrode
VGS = Gate to Source voltage
VGS(th) = Turn-on threshold voltage
VDS = Drain to Source voltage
W = Channel width
L = Channel length
In this region of operation the IDS value is proportional to VDS value
and the device can be used as gate-voltage controlled resistor.
The ALD1148xx/ALD1149xx depletion mode EPAD MOSFETs are
different from most other types of depletion mode MOSFETs and
certain types of JFETs in that they do not exhibit high gate leakage
For higher values of VDS where VDS >= VGS - VGS(th), the satura-
tion current IDS is now given by (approx.):
IDS = u . COX . W/L . [VGS - VGS(th)]2
ALD114835/ALD114935
Advanced Linear Devices
3 of 11




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