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N-Channel MOSFET. 2SK2393 Datasheet

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N-Channel MOSFET. 2SK2393 Datasheet
















2SK2393 MOSFET. Datasheet pdf. Equivalent













Part

2SK2393

Description

Silicon N-Channel MOSFET



Feature


2SK2393 Silicon N Channel MOS FET Applic ation High voltage / High speed power s witching Features • Low on-resistance , High breakdown voltage • High speed switching • Low drive current • No secondary breakdown • Suitable for s witching regulator, motor control Outli ne RENESAS Package code: PRSS0004ZF-A ( Package name: TO-3PL) 1 2 3 REJ03G1010 -0300 Rev.3.00 Apr 28, 2009 .
Manufacture

Renesas Technology

Datasheet
Download 2SK2393 Datasheet


Renesas Technology 2SK2393

2SK2393; D 1. Gate G 2. Drain (Flange) 3. S ource S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak curre nt Body to drain diode reverse drain cu rrent Channel dissipation Channel tempe rature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Valu e at Tc = 25°C Symbol VDSS VGSS ID ID (pulse)*1 IDR Pch*2 Tch .


Renesas Technology 2SK2393

Tstg Ratings 1500 ±20 8 20 8 200 150 55 to +150 (Ta = 25°C) Unit V V A A A W °C °C REJ03G1010-0300 Rev.3.00 Apr 28, 2009 Page 1 of 6 2SK2393 Elect rical Characteristics Item Drain to so urce breakdown voltage Gate to source l eak current Zero gate voltage drain cur rent Gate to source cutoff voltage Stat ic drain to source on state resistance Forward transfer admitta.


Renesas Technology 2SK2393

nce Input capacitance Output capacitance Reverse transfer capacitance Turn-on d elay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse rec overy time Note: 3. Pulse Test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yf s| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 — — 2.0 — 1.8 — — — — — — — — Typ — .





Part

2SK2393

Description

Silicon N-Channel MOSFET



Feature


2SK2393 Silicon N Channel MOS FET Applic ation High voltage / High speed power s witching Features • Low on-resistance , High breakdown voltage • High speed switching • Low drive current • No secondary breakdown • Suitable for s witching regulator, motor control Outli ne RENESAS Package code: PRSS0004ZF-A ( Package name: TO-3PL) 1 2 3 REJ03G1010 -0300 Rev.3.00 Apr 28, 2009 .
Manufacture

Renesas Technology

Datasheet
Download 2SK2393 Datasheet




 2SK2393
2SK2393
Silicon N Channel MOS FET
Application
High voltage / High speed power switching
Features
Low on-resistance, High breakdown voltage
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
1
2
3
REJ03G1010-0300
Rev.3.00
Apr 28, 2009
D
1. Gate
G
2. Drain
(Flange)
3. Source
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
1500
±20
8
20
8
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G1010-0300 Rev.3.00 Apr 28, 2009
Page 1 of 6




 2SK2393
2SK2393
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
1500
2.0
1.8
Typ
1.9
3.0
4370
560
200
75
180
260
125
0.9
6.5
Max
±1
500
4.0
2.8
Unit
V
µA
µA
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0*1
VGS = ±20 V, VDS = 0
VDS = 1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 15 V*3
S
ID = 4 A, VDS = 20 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 4 A, VGS = 10 V,
ns RL = 7.5
ns
ns
V IF = 8 A, VGS = 0
µs IF = 8 A, VGS = 0,
diF / dt = 100 A / µs
REJ03G1010-0300 Rev.3.00 Apr 28, 2009
Page 2 of 6




 2SK2393
2SK2393
Main Characteristics
Power vs. Temperature Derating
400
300
200
100
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
10
Pulse Test
15 V
8
10 V
8V
7V
6
4
6V
2
VGS = 5 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
ID = 5 A
8
4
2A
1A
0
4
8
12 16
20
Gate to Source Voltage VGS (V)
REJ03G1010-0300 Rev.3.00 Apr 28, 2009
Page 3 of 6
Maximum Safe Operation Area
100
30
10
1001µ0sµs
3
1
OtlihmpisietearadretiboaynisRiDnDCSO(opPne)Wrati=on1(0Tcm=1s2m(51s°sCh)ot)
0.3
0.1 Ta = 25°C
20 50 100 200
500 1000 2000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 10 V
Pulse Test
4
3
2
Tc = 75°C
25°C
–25°C
1
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
20
Pulse Test
10
5
VGS = 10 V
2
15 V
1
0.5
0.2
0.1 0.3 1 3 10 30 100
Drain Current ID (A)




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