MOS FET. 2SK2393 Datasheet

2SK2393 FET. Datasheet pdf. Equivalent

Part 2SK2393
Description Silicon N Channel MOS FET
Feature www.DataSheet4U.com 2SK2393 Silicon N Channel MOS FET REJ03G1010-0200 (Previous: ADE-208-1357) Rev..
Manufacture Renesas Technology
Datasheet
Download 2SK2393 Datasheet



2SK2393
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2SK2393
Silicon N Channel MOS FET
Application
High voltage / High speed power switching
Features
Low on-resistance, High breakdown voltage
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
1
2
3
REJ03G1010-0200
(Previous: ADE-208-1357)
Rev.2.00
Sep 07, 2005
D
1. Gate
G 2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6



2SK2393
2SK2393
www.DaAtaSbhseoet4luU.tceomMaximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
1500
2.0
1.8
Typ
1.9
3.0
4370
560
200
75
180
260
125
0.9
6.5
Ratings
1500
±20
8
20
8
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±1
500
4.0
2.8
Unit
V
µA
µA
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0*1
VGS = ±20 V, VDS = 0
VDS = 1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 15 V*3
S ID = 4 A, VDS = 20 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 4 A, VGS = 10 V,
ns RL = 7.5
ns
ns
V IF = 8 A, VGS = 0
µs IF = 8 A, VGS = 0,
diF / dt = 100 A / µs
Rev.2.00 Sep 07, 2005 page 2 of 6







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