2SK2393

2SK2393 Silicon N Channel MOS FET Application High voltage / High speed power switching Features Low on-resistance, High breakdown voltage High speed switching Low drive current No secondary breakdown Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) 1 2 3 REJ03G1010-0300 Rev.3.00 Apr 28, 2009 D 1. Gate G 2. Drain (Flange) 3. Source S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 1500 ±20 8 20 8 200 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C REJ03G1010-0300 Rev.3.00 Apr 28, 2009 Page 1 of 6 2SK2393 Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 — — 2.0 — 1.8 — — — — — — — — — Typ — — — — 1.9 3.0 4370 5...