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KKA2586

KODENSHI KOREA

1024 x 8-Bit n-MOS EEPROM

www.DataSheet4U.com TECHNICAL DATA 2 KKA2586 1024 x 8-Bit n-MOS EEPROM with I C-Bus Interface The KKA2586 is a 8-Kbit...


KODENSHI KOREA

KKA2586

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www.DataSheet4U.com TECHNICAL DATA 2 KKA2586 1024 x 8-Bit n-MOS EEPROM with I C-Bus Interface The KKA2586 is a 8-Kbit (1024 x 8-bit) n-MOS floating gate electrically erasable programmable read only memory (EEPROM). IC works in systems with serial I2C-bus. Up to two KKA2586 devices may be connected to the I2C-bus.The programming of the array is implemented by electron’s tunneling. The programming voltage is generated on-chip, using a voltage multiplier. Device is functionally identical to the SDA2586, Siemens. IC are made in 8-pin DIP and 8-pin SOP. FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Non-volatile storage of information during 10 years Single supply (Ucc=4,75 B - 5,25 B) On-chip voltage multiplier On-chip generator of bulk biasing Serial input/output I2C-bus 10 000 ERASE/WRITE cycles per byte; Internal reprogramming (no external components) Duration of the ERASE/WRITE cycle is 15 ms Temperature range: 0 ÷ +700C ELECTRICAL CHARACTERISTICS Parameter Supply current, mA Output low voltage (SDA), V High leakage current: -on output (SDA), µA -on inputs SCL, SDA, µA -on inputs CS, TP1, TP2,µA Input capacitance, pF Clock input frequency, kHz Reprogramming cycle time, ms Erase of die cycle time, ms The number of E/W cycles on 1 byte Input high voltage: -inputs SDA, SCL, V -inputs CS, TP1, TP2, V Input low voltage: -inputs SDA, SCL, V -inputs CS, TP1, TP2, V Conditions UCC=5.25 B IOL=3 mA UCC=4.75B UOH=5,25 B UIH=5,25 B UIH=5,25 B UI= 0 B Erase and Write UTP2= 5,0 B Symbol ICC0 UOL Min. Max...




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